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| Advanced Technical Information HiPerFASTTM IGBT with Diode IXGA 7N60BD1 IXGP 7N60BD1 VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.0 V = 150ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 18 Clamped inductive load @ 0.8 VCES TC = 25C Maximum Ratings 600 600 20 30 14 7 56 ICM = 14 80 -55 ... +150 150 -55 ... +150 300 M3 M3.5 V V V V A A A A G E C (TAB) GC E TO-220AB (IXGP) TO-263 AA (IXGA) W C C C C Features G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md www..net * International standard packages 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g JEDEC TO-263 surface mountable and JEDEC TO-220 AB * High current handling capability * HiPerFASTTM HDMOSTM process * MOS Gate turn-on - drive simplicity Applications Mounting torque, (TO-220) TO-220 TO-263 Weight Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 750 100 1.8 2.0 V V A A nA V * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode * AC motor speed control * DC servo and robot drives * DC choppers Advantages power supplies BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE TJ = 25C TJ = 125C VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V * High power density * Suitable for surface mounting (c) 2002 IXYS All rights reserved DS98977(12/02) IXGA 7N60BD1 IXGP 7N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 7 500 VCE = 25 V, VGE = 0 V, f = 1 MHz 50 17 25 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 * VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 * VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG IGBT 0.50 15 10 10 10 100 150 0.3 10 15 0.15 200 250 0.6 1.56 200 250 0.6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline Dim. A B C D E F G H J K M N Q R Pins: 2 - Collector 4 - Collector Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side TO-220 AB Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Reverse Diode (FRED) Symbol VF IRM t rr RthJC www..net Test Conditions I F = 10A; T VJ = 150C T VJ = 25C Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.96 2.95 2 2.5 V V V 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 5,486,715 5,381,025 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 6,306,728B1 V R = 100 V; I F =25A; -di F /dt = 100 A/s L < 0.05 H; T VJ = 100C IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C Diode 35 ns 1.6 K/W Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 5,187,117 5,237,481 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 R 5,049,961 5,063,307 |
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